Genesis of nanostructures formation in amorphous hydrogenated semiconductors A-SI1-X CX: H

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dc.contributor.author Kumekov, M.E.
dc.date.accessioned 2019-05-16T11:12:05Z
dc.date.available 2019-05-16T11:12:05Z
dc.date.issued 2010-12-20
dc.identifier.citation Kumekov, M.E. Genesis of nanostructures formation in amorphous hydrogenated semiconductors A-SI1-X CX: H / M.E. Kumekov // Eurasian Physical Technical Journal. – 2010. – Vol.7. – № 2(14). – P. 9-11. ru_RU
dc.identifier.issn 1811-1165
dc.identifier.uri http://rep.ksu.kz//handle/data/5902
dc.description.abstract On the basis of the analysis of experimental data it is shown that at increase in the maintenance of carbon more, than on 50 % (х from above 0,5) there is a cardinal change of photoluminescent and photo-electric properties thin films а-Si1-XCX:H connected with nanoclusterization the films structures. ru_RU
dc.language.iso en ru_RU
dc.publisher Ye.A.Buketov Karaganda State University Publishing house ru_RU
dc.relation.ispartofseries Eurasian Physical Technical Journal;Vol. 7 № 2(14)
dc.subject thin films ru_RU
dc.subject nanoclusterization ru_RU
dc.subject semiconductors ru_RU
dc.subject exciting quantums ru_RU
dc.subject structurization ru_RU
dc.title Genesis of nanostructures formation in amorphous hydrogenated semiconductors A-SI1-X CX: H ru_RU
dc.type Article ru_RU


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