Modeling of morphology of semiconductor surfaces with quantum nanowires

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dc.contributor.author Zhanabaev, Z.Zh.
dc.contributor.author Grevtseva, T.Yu.
dc.contributor.author Imanbayeva, A.K.
dc.contributor.author Zhanabayeva, A.E.
dc.date.accessioned 2019-04-24T08:52:29Z
dc.date.available 2019-04-24T08:52:29Z
dc.date.issued 2014
dc.identifier.citation Modeling of morphology of semiconductor surfaces with quantum nanowires/Z.Zh. Zhanabaev, T.Yu. Grevtseva, A.K. Imanbayeva [et al.] //Eurasian Physical Technical Journal. - 2014.- Vol. 11, No.1(21).-P.47-53 ru_RU
dc.identifier.issn 1811-1165
dc.identifier.uri http://rep.ksu.kz:443//handle/data/5388
dc.description.abstract A possibility to model morphology of surfaces of semiconductor films containing quantum-sized structures is analyzed. For this aim we use our new map for fractal evolution of measure and method for reconstruction of dynamical chaos by one-dimensional sequence of data. Intermittent distribution of concentration of current carriers typical for images of semiconductor surfaces obtained by modern methods of microscopy was obtained. Distribution of current carriers is presented in phase plane. Using of the approach give us a possibility to model semiconductor surfaces containing horizontal and vertical quantum nanowires. ru_RU
dc.language.iso en ru_RU
dc.publisher Publishing House of the KarSU named after E.A.Buketov ru_RU
dc.relation.ispartofseries Eurasian Physical Technical Journal;Vol.11, № 2(22)
dc.subject morphology ru_RU
dc.subject semiconductor films ru_RU
dc.subject dynamical chaos ru_RU
dc.subject quantum-sized structure ru_RU
dc.subject map for fractal evolution ru_RU
dc.subject quantum nanowires ru_RU
dc.title Modeling of morphology of semiconductor surfaces with quantum nanowires ru_RU
dc.type Article ru_RU


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