Abstract:
The nonlinear phenomena and instability in semiconductor structures are considered. Mechanisms of emergence
of negative differential conductivity of N and S — types are described. As an example of education and
use of drift not stability in semiconductors Gunn effect is considered. Operation of the generator of Gunn
from the point of view of development of processes of self-organization in semiconductor structures is analysed.
It is shown that the principle of its work is based on features of a power range of AsGa.
