Abstract:
In article the physical processes happening in Gunn diode which is under the influence of strength electric
field exceeding threshold value are analyzed. It is shown that because of transition of electrons from the lower
central power area to the top side valley of a power range of arsenide of gallium carriers of a charge are divided
into two groups: the «light» and «heavy» electrons having respectively big and smaller drift mobility.
At the same time there is an electric domain which resistance is more than resistance of other part of Gunn
diode of therefore tension of internal electric field of the diode will exceed electric field strength out of the
domain. With growth of tension of external electric field falling of potential on the domain grows, and out of
the domain decreases. Growth of drift speed of electrons of the electric domain and reduction of drift speed of
electrons out of it is at the same time observed. Formation of the domain comes to the end when drift velocity
electrons in the domain and out of it are compared. Steady state in Gunn diode is established when integral
Lagrangian reaches the minimum value.
